at the Center for Nanoscience and Nanotechnology (C2N, CNRS)
We present an effective method of determining the doping level in n-type III–V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein–Moss shift) and … Continued
Novel architectures for light trapping in ultrathin Cu(In,Ga)Se_2 (CIGS) solar cells are proposed and numerically investigated. They are composed of a flat CIGS layer with nanostructured back mirrors made of highly reflective metals. Multi-resonant absorption is obtained for two different … Continued
Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material, while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. … Continued