I am a CNRS researcher at the Centre for Nanoscience and Nanotechnologies (C2N), with research interests in III-V growth, luminescence characterisation and device fabrication. More specifically, I am exploring those different aspects for the fabrication of high efficiency solar cells.
I hold a Master of Science from the INSA Rennes, on materials and nanotechnologies, obtained in 2010. I then completed my PhD at the Institute on Research and Development of Photovoltaic Energy (IRDEP, now Institut Photovoltaïque d’Ile-de-France (IPVF)). During this thesis, I developed a Hyperspectral Imager: an original tool to record the luminescence with both a spatial and a spectral resolution, together with an absolute calibration (i.e. the signal is measured in units of photon density). A particular application of this setup is the contactless measurement of quasi-Fermi level splitting maps, that can be related to a local voltage and allows discussing electronic transport at the micro-meter scale . The Hyperspectral Imager was developed in collaboration with Photon etc..
I moved in 2014 to the University of Tokyo, for a postdoctoral position in the group of Professors Sugiyama and Nakano. This work also took place in the frame of the International Associate Laboratory NextPV, that gathers researchers on photovoltaic in Japan and France. There I studied the application of strain-balanced multi-quantum wells obtained by MOVPE for solar cells. Those structures allow to widen the available effective bandgap range for a given III-V lattice constant. Specifically, obtaining a material lattice matched to GaAs but with a lower bandgap could replace germanium in 3 subcells multijunction for a better match with the solar spectrum. Specific samples were grown to clarify the origin of the MQW cell high open-circuit voltages  and to highlight strain induced material quality reduction . Quantized structures could also find applications in PV as intermediate band absorbers. I showed that such absorbers cannot actually be used for working devices, unless so-called “electronic ratchets” are included in the structure .
I started a postdoc at the Center of Nanoscience and Nanotechnology (C2N) on November 2018, before starting a permanent position on October 2019. In this new position my objective is to develop low cost III-V solar cells. A route to explore is the recycling of the original III-V substrate for several growth. Growth assisted by 2D materials, such as the Van der Waals epitaxy or the Remote epitaxy are investigated. I work in close collaboration with the Institut Photovoltaïque d’Ile-de-France (IPVF), on research programs for the development of III-V solar cells and characterization methods.
I have co-authored 18 peer-reviewed papers, 2 patents and 28 conference proceedings.
 A. Delamarre, M. Paire, J.-F. Guillemoles, and L. Lombez, “Quantitative luminescence mapping of Cu(In, Ga)Se2 thin-film solar cells,” Prog. Photovolt. Res. Appl., vol. 23, no. 10, pp. 1305–1312, Oct. 2015, doi: 10.1002/pip.2555.
 A. Delamarre, Y. Wang, K. Watanabe, Y. Nakano, M. Sugiyama, and J.-F. Guillemoles, “Influence of the host PIN diode material in multi-quantum well solar cells,” in Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Sep. 2015, p. 48.
 A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, and J. Guillemoles, “An Electronic Ratchet Is Required in Nanostructured Intermediate-Band Solar Cells,” IEEE J. Photovolt., vol. 8, no. 6, pp. 1553–1559, Nov. 2018, doi: 10.1109/JPHOTOV.2018.2866186.