A time-resolved cathodoluminescence (TRCL) tool, Chronos, by Attolight, has been installed at C2N in November 2015, and upgraded in 2019.
Our CL tool combines a scanning electron microscope (SEM) with a spatial resolution down to 10 nm, a ultrastable nanopositioning stage with low temperature capability (10K to 300K), and achromatic collection optics that enable quantitative CL over a wide field of view. It also features a high sensitivity EBIC (Electron Beam Induced Current) detection solution.
The luminescence is analyzed through two spectrometers and a series of detector arrays to cover a wide spectral range (250nm-1700nm).
The electron source can switch from continuous mode (CL) to pulsed mode (TRCL) driven by an ultrafast laser to create electron pulses, providing a temporal resolution down to 10 ps (repetition rate 80 MHz). Our TRCL system uses two complementary detection schemes: a time-correlated single photon counting (TCSPC) module equiped with a photomultiplier and an avalanche photodiode, and a streak camera.
Contact: stephane.collin@c2n.upsaclay.fr
References:
- Humidity-Induced Degradation Processes of Halide Perovskites Unveiled by Correlative Analytical Electron Microscopy, Salim Mejaouri, Stefania Cacovich, Philippe Baranek, Baptiste Bérenguier, Iwan Zimmermann, Armelle Yaiche, Dominique Loisnard, Jean Rousset, and Stéphane Collin, Small Methods, published online, 2023.
- CdZnTe Crystal Quality Study by Cathodoluminescence Measurements, Valentin Léger, Thomas Bidaud, Stéphane Collin, Gilles Patriarche, Catherine Corbel, and Laurent Rubaldo, Journal of Electronic Materials, published online, 2023.
- Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires, Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder V A Galeti, Y Galvao Gobato, Andrea Cattoni, Teemu Hakkarainen, and Stéphane Collin, Nanotechnology 33, 185704, 2022.
- Industrially Compatible Fabrication Process of Perovskite-Based Mini-Modules Coupling Sequential Slot-Die Coating and Chemical Bath Deposition, Iwan Zimmermann, Marion Provost, Salim Mejaouri, Marc Al Atem, Alexandre Blaizot, Aurélien Duchatelet, Stéphane Collin, and Jean Rousset, ACS Applied Materials & Interfaces 14, 11636–11644, 2022.
- Porous Nitride Light-Emitting Diodes, Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva, ACS Photonics 4, 1256–1263, 2022.
- Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence, Benjamin Damilano, Stéphane Vezian, Marie-Pierre Chauvat, Pierre Ruterana, Nuño Amador-Mendez, Stéphane Collin, Maria Tchernycheva, Pierre Valvin, and Bernard Gil, J. Appl. Phys. 132, 035302, 2022.
- Imaging CdCl2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescence, Thomas Bidaud, John Moseley, Mahisha Amarasinghe, Mowafak Al-Jassim, Wyatt K. Metzger, and Stéphane Collin, Phys. Rev. Materials 5, 064601, 2021.
- Exceeding 200‐ns Lifetimes in Polycrystalline CdTe Solar Cells, T. Ablekim, J.N. Duenow, C.L. Perkins, J. Moseley, X. Zheng, T. Bidaud, B. Frouin, S. Collin, M.O. Reese, M. Amarasinghe, E. Colegrove, S. Johnston, W.K. Metzger, Solar RRL 5, 2100173, 2021.
- Quantitative Assessment of Carrier Density by Cathodoluminescence I. GaAs thin films and modeling, Hung-Ling Chen, Andrea Scaccabarozzi, Romaric De Lépinau, Fabrice Oehler, Aristide Lemaître, Jean-Christophe Harmand, Andrea Cattoni, and Stéphane Collin, Phys. Rev. Applied 15, 024006, 2021.
- Quantitative Assessment of Carrier Density by Cathodoluminescence II. GaAs nanowires, Hung-Ling Chen, Romaric De Lépinau, Andrea Scaccabarozzi, Fabrice Oehler, Jean-Christophe Harmand, Andrea Cattoni, and Stéphane Collin, Phys. Rev. Applied 15, 024007, 2021.
- One-step slot-die coating deposition of wide-bandgap perovskite absorber for highly efficient solar cells, Sophie Bernard, Sébastien Jutteau, Salim Mejaouri, Stefania Cacovich, Iwan Zimmerman, Armelle Yaiche, Stéphanie Gbegnon, Dominique Loisnard, Stéphane Collin, Aurélien Duchatelet, Frédéric Sauvage, Jean Rousset, Solar RRL, published online, 2021.
- Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy, Omar Saket, Junkang Wang, Nuno Amador-Mendez, Martina Morassi, Arup Kunti, Fabien Bayle, Stéphane Collin, Arnaud Jollivet, Andrey Babichev, Tanbir Sodhi, Jean-Christophe Harmand, François Julien, Noelle Gogneau, Maria Tchernycheva, Nanotechnology 32, 085705, 2021.
- Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes, H. Zhang, V. Piazza, V. Neplokh, N. Guan, F. Bayle, S. Collin, L. Largeau, A. Babichev, F. H. Julien and M. Tchernycheva, Nanotechnology 32, 105202, 2021.
- Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires, O. Saket, C. Himwas, A. Cattoni, F. Oehler, F. Bayle, S. Collin, L. Travers, A. Babichev, F. H. Julien, J. C. Harmand, M. Tchernycheva, Appl. Phys. Lett. 117, 123104, 2020.
- Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications, Omar Saket, Chalermchai Himwas, Valerio Piazza, Fabien Bayle, Andrea Cattoni, Fabrice Oehler, Gilles Patriarche, Laurent Travers, Stéphane Collin, François H. Julien, Jean-Christophe Harmand, Maria Tchernycheva, Nanotechnology 31, 145708, 2020.
- Erbium-doped yttria-stabilised zirconia thin films grown by PLD for photonic applications, A. Ruiz-Caridad, G. Marcaud, J. M. Ramirez, Elena Duran-Valdeiglesias, Christian Lafforgue, Jianhao Zhang, L. Largeau, T. Maroutian, S. Matzen, C. Alonso-Ramos, S. Collin, G. Agnus, S. Guerber, C. Baudot, F. Boeuf, Stéphane Monfray, Sébastien Crémer, V. Vakarin, E. Cassan, D. Marris-Morini, P. Lecoeur, L. Vivien, Thin Solid Films 693, 137706, 2020.
- Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications, Alicia Ruiz-Caridad, Guillaume Marcaud, Joan Manel Ramirez, Ludovic Largeau, Thomas Maroutian, Sylvia Matzen, Stéphane Collin, Carlos Alonso-Ramos, Guillaume Agnus, Sylvain Guerber, Charles Baudot, Frederic Boeuf, Vladyslav Vakarin, Elena Duran-Valdeiglesias, Eric Cassan, Delphine Marris-Morini, Philippe Lecoeur, Laurent Vivien, IEEE Journal of Quantum Electronics 56, 1-7, 2020.
- Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires, C. Himwas, S. Collin, H.-L. Chen, G. Patriarche, F. Oehler, L. Travers, O. Saket, F. H. Julien, J.-C. Harmand, M. Tchernycheva, Nanotechnology 30, 304001, 2019.
- Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques, Valerio Piazza, Andrey V. Babichev, Lorenzo Mancini, Martina Morassi, Patrick Quach, Fabien Bayle, Ludovic Largeau, François H. Julien, Pierre Rale, Stéphane Collin, Jean-Christophe Harmand, Noelle Gogneau, Maria Tchernycheva, Nanotechnology 30, 214006, 2019.
- Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells, John Moseley, Pierre Rale, Stéphane Collin, Eric Colegrove, Harvey Guthrey, Darius Kuciauskas, Helio Moutinho, Mowafak Al-Jassim, and Wyatt K. Metzger, J. Appl. Phys. 124, 113104, 2018.
- Determination of n-type doping level in single GaAs nanowires by cathodoluminescence, Hung-Ling Chen, Chalermchai Himwas, Andrea Scaccabarozzi, Pierre Rale, Fabrice Oehler, Aristide Lemaître, Laurent Lombez, Jean-François Guillemoles, Maria Tchernycheva, Jean-Christophe Harmand, Andrea Cattoni, and Stéphane Collin, Nano Letters 17, 6667-6675, 2017.
- In-situ passivation of GaAsP nanowires, C. Himwas, S. Collin, P. Rale, N. Chauvin, G. Patriarche, F. Oehler, F. H. Julien, L. Travers, J.-C. Harmand, M. Tchernycheva, Nanotechnology 28, 495707, 2017.
- Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001), Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stéphane Collin, Julien Brault, Fausto Sirotti, François Bertan, Patrick Lefèvre, Stéphane Berciaud, A. T. Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault and Abdelkarim Ouerghi, Phys. Rev. B 96, 115312, 2017.